期刊文献+

CCD强光串扰效应的串扰线缺口现象及其机制 被引量:14

Gap on crosstalk line about CCD crosstalk effect induced by intense light and its mechanism
在线阅读 下载PDF
导出
摘要 在激光辐照行间转移CCD相机的实验中发现了关于CCD串扰效应的一个新现象,即在串扰线上出现缺口,该缺口紧邻主光斑上侧且随光强增大而减小。基于行间转移面阵CCD的构造和工作过程,利用CCD串扰效应的一种新机制对现象作出了合理的解释。串扰线的形成依赖于在垂直转移动作过程中CCD信号积分势阱中的载流子向垂直转移CCD寄存器中的溢出。串扰线上缺口的出现则是由于CCD的信号积分势阱被读出转移动作清空后再次填满需要经过一定时间,该时间内无信号电荷溢出至转移沟道;读出转移清空存储势阱的时刻是构成主光斑的主体信号电荷按正常时序进入垂直转移CCD寄存器的时刻,故缺口紧邻主光斑的上侧;光强越大,光电子再次填满存储势阱乃至溢出形成串扰线所需要的时间越短,则缺口越小。 A new phenomenon about crosstalk effect of CCD was discovered in the experiment of laser irradiating the inter- line transfer CCD camera. It is that a gap, adjoining the upper side of the main spot, appears on the crosstalk line and becomes smaller when laser becomes more intense. Through the analysis on the structure and process of interline transfer CCD image sen- sor, a new crosstalk mechanism is given to explain the phenomenon. In the process of vertieal transfer action, the overflowing of signal charges in integral well to vertical CCD register makes the crosstalk line. When readout transfer action empties the integral well, the integral well needs time to be refilled, during which no signal charge overflows to vertical CCD register. While the main signal charge package that makes the main spot in the output image of CCD is transferred from the integral well to the vertieal CCD register in normal scheduling, thus a gap appears adjoining the upper side of the main spot. When laser becomes more in- tense, less time will he needed for signal charges to fill the integral well and to overflow into vertical CCD register, and then the gap becomes smaller.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2010年第7期1505-1510,共6页 High Power Laser and Particle Beams
基金 国家重点基础发展计划项目
关键词 激光 CCD 串扰线缺口 溢出中断 耦合转移 laser CCD gap on crosstalk line pause of overflowing coupled transfer
  • 相关文献

参考文献20

  • 1Dyck R H,Steffe W.Effects of optical crosstalk in CCD image sensors[C]//Proc 5th Int Conf on Applications of Charge-Coupled Devices.1978.
  • 2James P L,Chang W C,Constantine N A,et al.Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices[J].IEEE Trans on Computer-Aided Design,1985,4(4):531-535.
  • 3Nadine M,Christophe H H,Vincent B,et al.Study of the mechanism of electronic diffusion in a CCD camera subject to intense laser illumination[C]//4th Euro Conf on Radiation and Its Effects on Components and Systems.1997:417-423.
  • 4王世勇,付有余,郭劲.脉冲激光辐照CCD面阵探测器系统局部的干扰效应研究[J].应用激光,2001,21(5):317-318. 被引量:11
  • 5张大勇,赵剑衡,王伟平,刘仓理,唐小松.1.319μm连续YAG激光束对可见光面阵CCD系统的干扰研究[J].强激光与粒子束,2003,15(11):1050-1052. 被引量:27
  • 6张震,程湘爱,姜宗福.可见光CCD的光致过饱和现象[J].强激光与粒子束,2008,20(6):917-920. 被引量:25
  • 7张震,程湘爱,姜宗福.强光致CCD过饱和效应机理分析[J].强激光与粒子束,2010,22(2):233-237. 被引量:25
  • 8Michael F B,Zhang Chenzhi,Steve E W,et al.Laser-induced damage to silicon CCD imaging sensors[C3//Proc of SHE.1989,1105:68-77.
  • 9Michael F B,Zhang Chenzhi,Ludovic B,et al.Laser-induced functional damage to silicon CCD sensor arrays[CJ//Proc of SPIE.1991,1624:67-79.
  • 10Zhang Chenzhi,Blarre L D,Walser R M,et al.Mechanisms for laser induced functional damage to silicon charge-coupled imaging sensors[J].Appl Opt,1993,32(27):5201-5210.

二级参考文献53

共引文献187

同被引文献99

引证文献14

二级引证文献62

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部