摘要
本文简要地分析了激光与ＭＯＳ结构ＣＣＤ器件相互作用全过程，提出了该破坏过程中的几种损伤阈值。在进行了实际测试的基础上，首次得到了Ｑ开关ＹＡＧ激光致使该种器件产生的热熔融阈值、光学击穿阈值、直接破坏阈值和致使整个器件失效的激光能量阈值等有关结果。
This paper analyzes the interaction process of laser beam and MOS CCD devices,and investigates the damage thresholds of CCD devices.In the experimental study,using a Q-switched YAG laser to irradiate a CCD device,the heat melting threshold,optical breaking threshold and direct damaging threshold of CCD are mea-sured,and the laser energy threshold causing whole CCD device failure is measured too.
出处
《激光技术》
CAS
CSCD
1994年第3期153-156,共4页
Laser Technology
关键词
电荷耦合器件
激光
阈值
测量
CCD device MOS structure laser destruction threshold
