摘要
介绍了半导体可饱和吸收镜的锁模原理和制作方法,通过分析超短脉冲激光与半导体材料作用原理,阐述了提高半导体可饱和吸收镜抗激光损伤阈值的方法,如吸收区掺杂、退火、扩大低温生长区、表面热沉等。实验中通过退火和镀介质薄膜使半导体可饱和吸收镜由不能工作转为能够工作,并且获得稳定的连续锁模脉冲激光输出。
The modelocking principle and the manufacture method of semiconductor saturable absorption mirror are introduced. By analyzing the behavior that ultrashort pulse acts on semiconductor material, some methods to increase the anti-damage threshold are put forward, such as doping in absorption layer, annealing, widening the area grown at low temperature, surface heat sink and so on. In experiment, several semiconductor saturable absorption mirrors could work and obtain stable passive modelocking pulse output after annealing and being coated with dielectric film.
出处
《红外与激光工程》
EI
CSCD
北大核心
2004年第3期256-259,共4页
Infrared and Laser Engineering
关键词
超短脉冲激光
半导体可饱和吸收镜
损伤
Annealing
Dielectric films
Heat sinks
Laser mode locking
Light absorption
Low temperature effects
Semiconductor device manufacture
Ultrashort pulses
