摘要
利用Silvaco TCAD软件,研究了电离总剂量(total ionizing dose,TID)效应对28 nm NMOSFET转移特性的影响。构建了28 nm NMOSFET 3维仿真模型,分3种情况探究了TID效应影响下,场氧化层和栅氧化层对NMOSFET的阈值电压、漏电流和跨导的影响。仿真结果表明,在TID效应影响下,28 nm NMOSFET场氧化层对器件阈值电压、漏电流和跨导的影响都明显大于栅氧化层,随着器件尺寸的减小,场氧化层在TID效应中对NMOSFET电学特性的影响较大。仿真结果为进一步探究NMOSFET的TID效应提供了参考。
A three-dimensional simulation model of 28 nm NMOSFET is constructed to study the effect of total ionizing dose(TID)effect on the transfer characteristics of 28 nm NMOSFET by using Silvaco TCAD software.The effects of field oxide and gate oxide on the threshold voltage,leakage current,and trans conductance of NMOSFET under the influence of TID effect are investigated in three cases.The simulation results show that under the influence of TID effect,the influence of field oxide layer on the threshold voltage,leakage current,and trans conductance of 28 nm NMOSFET is significantly greater than that of gate oxide layer,which shows that with the decrease of device size,field oxide layer has a great influence on the electrical characteristics of NMOSFET.The simulation results provide a reference for further studying the TID effect of NMOSFET.
作者
任晨
曹艳荣
张龙涛
吕航航
马毛旦
吕玲
郑雪峰
REN Chen;CAO Yanrong;ZHANG Longtao;LYU Hanghang;MA Maodan;LYU Ling;ZHENG Xuefeng(School of Mechano-Electronic Engineering,Xidian University,State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xi’an 710071,China)
出处
《现代应用物理》
2022年第1期172-179,共8页
Modern Applied Physics
基金
国家自然科学基金资助项目(11690042,U1866212,12035019,61727804,11690040),北京智芯微电子技术有限公司实验室开放基金,科学挑战计划资助项目(TZ2018004)。
