摘要
采用在SIMOX圆片埋氧层中注入氟 (F)离子的方法改善SIMOX的抗总剂量辐射能力 ,通过比较未注F样品和注F样品辐照前后SIMOX器件Ids Vgs特性和阈值电压 ,发现F具有抑制辐射感生 pMOSFET和nMOSFET阈值电压漂移的能力 ,并且可以减小nMOSFET中由辐照所产生的漏电流 .说明在SOI材料中前后Si/SiO2 界面处的F可以减少空穴陷阱密度 ,有助于提高SIMOX的抗总剂量辐射能力 .
Ionizing radiation effects of SIMOX devices by implanting fluorine ions into buried oxide (BOX) are studied.Pre- and post-radiation I ds- V gs characteristics of different samples are used to analyse radiation hardness of fluoridated SIMOX.The experimental data show that the radiation-induced threshold voltage shift of pMOSFETs and nMOSFETs,as well as the radiation-induced increase of off-state leakage current of nMOSFETs can be restrained by fluorine implantion.
