摘要
为研究累积总剂量辐照对SRAM瞬时剂量率翻转效应的影响,选取特征尺寸为 180 nm 的商用SRAM在 60 Co γ辐射源及“强光一号”加速器上进行了累积总剂量效应与瞬时剂量率效应的实验研究。实验结果表明,在累积总吸收剂量分别为100 krad(Si)和150 krad(Si)时, 180 nm SRAM瞬时剂量率翻转对累积总剂量辐照实验过程中的写入数据都表现出“反印记效应”依赖性,即当SRAM芯片在累积总剂量辐照实验中与瞬时剂量率辐照实验中写入的数据类型相同时,该数据类型的瞬时剂量率敏感性增大,更容易发生翻转。
To study the impact of total dose radiation on the transient dose rate upset effect of SRAM, a commercial SRAM with a characteristic size of 180 nm is selected to conduct experiments of total dose effect and transient dose rate effect on 60 Co γ radiation source and Qiangguang-I accelerator, respectively. The experimental results show that when the total dose is 100 krad(Si) or 150 krad(Si), the transient dose rate upset effect of 180 nm SRAM has an imprinting effect depended on the data written in the total dose irradiation experiment, that is, when the data pattern of SRAM written in the total dose irradiation experiment is the same as that in the transient dose rate irradiation experiment, the data pattern could be more sensitive to the transient dose rate, and upset would more likely occur.
作者
李俊霖
李瑞宾
贺朝会
齐超
刘敏波
刘岩
LI Jun-lin;LI Rui-bin;HE Chao-Hui;QI Chao;LIU Min-Bo;LIU Yan(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an 710024, China;School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China)
出处
《现代应用物理》
2019年第2期37-41,共5页
Modern Applied Physics
基金
国家自然科学基金资助项目(11835006
11505137)
