摘要
研究了脉宽对于中红外脉冲激光带内损伤碲镉汞(HgCdTe)材料阈值的影响,使用一维自洽模型对激光辐照HgCdTe材料程中的载流子数密度,载流子对数目流,载流子对能流,载流子温度和材料晶格温度等相关参数进行仿真计算。仿真结果表明,波长2.85μm,脉宽30 ps~10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值为200~500 mJ/cm^(2)。其中,300 ps~3 ns脉冲激光的损伤阈值相近,均为200 mJ/cm^(2)且低于其他脉宽激光的损伤阈值。搭建实验光路并进行相关实验验证仿真模型的正确性。实验发现,波长2.85μm、脉宽300 ps的单脉冲激光带内辐照HgCdTe材料的损伤阈值在200 mJ/cm^(2)左右。相同条件下,10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值约474 mJ/cm^(2)。百皮秒脉冲激光对HgCdTe材料的损伤过程结合了热击穿和光学击穿效应,其独特的毁伤机理加剧了材料的损伤。
To study the influence of pulse width on the damage threshold of HgCdTe material irradiated by mid-infrared in-band laser pulse,a one-dimensional model named self-consistent model is established.Some parameters including number density of carrier,carrier and energy current,temperature of carrier and lattice are calculated in the whole process.Damage thresholds of in-band single pulsed laser,whose wavelength is 2.85 μm and pulse width ranges from 30 ps to 10 ns,are obtained.The results show that,damage threshold rauge of in-band laser is 200-500 mJ/cm^(2).Among them,the damage threshold of 300 ps to 3 ns laser pulses is about 200 mJ/cm^(2),which is lower than that of other pulsed lasers.The validity of simulation model is verified by setting up the experimental devices and carrying out relevant experiments.Using a single pulsed laser with wavelength of 2.85 μm and pulse width of 300 ps as the light source,the damage threshold is about 200 mJ/cm^(2).Under the same conditions,when 10 ns single laser pulse is used,the damage threshold is greater than 474 mJ/cm^(2).The damage process of the HgCdTe material destroyed by hundred-picosecond pulsed laser combines thermal and optical breakdown effects,and its unique mechanism aggravates the destruction of material.
作者
胡蔚敏
王小军
田昌勇
杨晶
刘可
彭钦军
Hu Weimin;Wang Xiaojun;Tian Changyong;Yang Jing;Liu Ke;Peng Qinjun(Key Laboratory of Solid State Lasers,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China;Key Laboratory of Functional Crystals and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《强激光与粒子束》
CAS
CSCD
北大核心
2022年第1期126-133,共8页
High Power Laser and Particle Beams
基金
国家自然科学基金青年科学基金项目(61805259)
中国科学院固体激光重点实验室基金项目。
关键词
激光辐照半导体
碲镉汞
损伤阈值
自洽模型
百皮秒脉冲激光
laser radiation semiconductor
HgCdTe
damage threshold
self-consistent model
hundredpicosecond pulsed laser
