摘要
对激光辐照功率密度高于探测器饱和阈值而低于其破坏阈值(中等功率的激光)时光伏型光电探测器的软损伤进行了理论研究,提出了一种新机制。当激光辐照功率密度超过探测器的饱和阈值以后,载流子的带间跃迁达到深度饱和,在半导体内产生热载流子且热载流子的温度高于晶格的温度,从而导致了光伏型光电探测器的电压输出信号随着辐照光功率密度的增加而下降直到零压输出的现象。对激光辐照下光伏型HgCdTe探测器的输出信号进行了模拟计算,结果表明,辐照光功率密度处于一定范围内探测器的输出信号随着辐照光功率密度的增加而逐步下降,甚至接近于零,与实验结果相符合。
Theoretical research on soft-damage in photovoltaic semiconductor detectors under medium power density laser irradiation （between the saturation threshold and the damage threshold of detector） was carried out and a new mechanism was proposed. When laser irradiation density exceeds the saturation threshold of a detector, the transitions of the carriers between bands saturated, hot carriers are produced in the semiconductor and the hot carrier temperature is higher than the crystal lattice temperature. Therefore the output of the photovoltaic detector decreases with the increase of laser power density till zero-voltage output appears. The output of a photovoltaic HgCdTe detector under laser irradiation is calculated. The calculating results are identical with experimental results.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2006年第6期917-921,共5页
High Power Laser and Particle Beams
基金
青岛科技大学引进人才科研启动基金资助课题(0022179)
国防科技基础研究基金资助课题
关键词
光伏型半导体探测器
软损伤机制
中等功率的激光
热载流子
Photovoltaic semiconductor detectors
Mechanism of soft-damage
Medium power density laser
Hot carriers
