摘要
采用自主研发系统,应用反应射频磁控技术,在氧化铝陶瓷样片上制备了方阻稳定性好的Ta N薄膜,研究了氮分压(N2/(N2+Ar))、沉积温度、沉积时间对Ta N膜层结构和电性能的影响,通过X射线衍射、四探针方阻仪器测试了薄膜的微结构和方阻值。结果表明:随氮分压的增大,Ta N薄膜的微结构明显变化,同时Ta N薄膜的方阻也有显著增大趋势;随着沉积温度的提高,Ta N薄膜的方阻有减小趋势,当温度达到400℃时,制备出了方阻小于100Ω/□的薄膜;随着沉积时间的加长,Ta N薄膜的方阻也出现减小的现象;最后制备出工艺稳定性好的方阻50Ω/□的Ta N薄膜。
The TaN coatings with stable sheet-resistance were deposited by RF magnetron sputtering on alumina substrate in a lab-built reactor. The influence of the growth conditions,including the N2-partial pressure in N2＋Ar mixture,substrate temperature and deposition time,on the microstructures and sheet-resistance of the TaN coatings was investigated with X-ray diffraction and four-probe resistivity measurement. The results show that the N2-partial pressure,substrate temperature and deposition time strongly affect the growth and sheet-resistance of the TaN coatings. For example,as the N2 partial pressure increased from 4% to 6% and 8%,bcc-TaN0. 04,fcc-TaN1. 13 and amorphous TaN were observed,respectively; and the sheet-resistance rapidly increased. The sheet-resistance decreased to below 100 Ω / □ when the substrate temperature rose up to 400℃. A longer deposition time produced a lower sheet-resistance. The TaN coatings with stable sheet-resistance of 50 Ω / □ were synthesized under the optimized conditions.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2015年第8期975-978,共4页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金资助项目(50704012)
辽宁省博士启动基金资助项目(20061017)
关键词
射频磁控
TaN薄膜
氮分压
沉积温度
沉积时间
RF magnetron sputtering
Ta N thin film
Nitrogen partial pressure
Deposition temperature
Deposition time
