摘要
采用反应直流磁控溅射法在Al2O3陶瓷基片上制备TaN薄膜,研究了氮流量(N2/(N2+Ar))对TaN薄膜微结构及性能的影响。结果表明,随氮流量的增大,TaN薄膜的氮含量、电阻率、方阻以及TCR的绝对值逐渐增大,而沉积速率逐渐降低。当N2流量较低(2%～4%)时,TaN薄膜中主要含有电阻率和TCR绝对值较低的六方Ta2N相(hcp),薄膜的电阻率在344μΩ.cm到412μΩ.cm范围内,薄膜的TCR绝对值约为几十ppm/℃。当氮气流量较高(5%～6%)时,薄膜中Ta2N相消失,薄膜中主要含有TCR绝对值较大的体心四方结构(bct)的TaN和四方结构(bct)的Ta3N5相,薄膜的电阻率在940μΩ.cm到1030μΩ.cm范围内,薄膜的TCR绝对值约为几百ppm/℃。
TaN thin films were deposited on A12O3 substrates by dc reactive magnetron sputtering. The influences of nitrogen partial flux（ N2/（ N2 ＋ Ar） ） on the micro - structures and the properties of the samples were investigated in detail. The results show that the nitrogen content, resistivity, sheet resistance and the absolute TCR of the TaN films are increased gradually with the increase of the nitrogen partial flux. However, the deposition rate of the sample is decreased with the increase of the nitrogen partial flux. At lower nitrogen partial flux （2% -4% ） , the main crystalline phase existing in the TaN films is Ta2N （hcp）which possesses lower resistivity and the range from 344μΩ·cm to 412μΩ·cm, and absolute TCR. The resistivity of the samples is about in the absolute TCR of the samples is about tens ppm/℃. However, at higher nitrogen partial flux （5% - 6% ）, the main crystalline phases existing in the TaN films are TaN （bct） and Ta3N5 （bct）, which possesses higher resistivity and absolute TCR. The resistivity of the samples ranges between 940μΩ·cm and 1030μΩ·cm, and the absolute TCR of the samples is about hundreds ppm/℃.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2010年第1期85-88,共4页
Journal of Functional Materials and Devices
基金
电子薄膜与集成器件国家重点实验室基金资助项目(KFJJ200804)
关键词
TaN薄膜
TCR
磁控溅射
氮流量
TaN thin films
TCR
magnetron sputtering
nitrogen partial flux
