摘要
采用扫描电镜结合EBSD技术分析了取向硅钢初次再结晶晶粒的取向和晶界结构。初次再结晶晶粒中以30°～55°的大角晶界为主,Goss取向晶粒含量小于5%,且经常生长在(111)〈112〉取向的晶粒周围。同时测定了二次再结晶晶粒的实际取向,并计算出与Goss取向的取向差关系。
The grain orientation and grain boundary structure of the decarburizing annealed samples of grain oriented silicon steel was investigated by electron backscatter diffraction technique in the scanning electron microscope. The results show that grain boundary mostly having a misorientation angle from 30° to 55° in the primary recrystallization and the amount of Goss grains is less than 5%. Goss grains are mainly nucleated around （111）〈112〉 grains. In addition, the orientation of final recrystallization grains was measured and the misorientation angle was calculated between the grain orientation of the finish product and （110）〈001〉.
出处
《电子显微学报》
CAS
CSCD
北大核心
2009年第1期15-19,共5页
Journal of Chinese Electron Microscopy Society
关键词
取向硅钢
EBSD
晶粒取向
晶界结构
偏离角
grain oriented silicon steel
EBSD
grain orientation
grain boundary
structure
misorientation angle
