摘要
本文提出一种用直线四探针测量金属/半导体欧姆接触的接触电阻率ρ_c的简捷方法──单点圆形模型。样品制备只需一个圆形金属电极,导出了ρ_c的表达式。如果样品不是半无限大,而是有一定厚度的薄片,则必须进行修正,给出了导电与绝缘界面两种情况的修正因子。根据这个模型,进行实验测量和计算,所得结果与文献报道一致。
A simple method using the in-line four probes to measure the specific contact resistanceρ_c of metal/semiconductor ohmic contact-the single-point circular model is developed. Onlyone circular metal electrode is need for the sample preparation,the equations for specificcontact resistance ρ_c have been derived. It is shown that if the sample is not semi-infinite buthas a definite thickness, the equations must be modified with some correction factors. Thecorrection factors are also derived for conductive in terface and isolation interface. Accordingto this model, we carried out some measurements and calculations, the results are in good agreementwith that of references.
