摘要
研究了Sb2O3和Ta2O5双施主掺杂对低电阻率的BaTiO3陶瓷PTC特性的影响。在Sb2O3和Ta2O5的摩尔分数分别为0.1%和0.01%时,得到了室温电阻率为4.59 Ω·cm,升阻比为3.4的优质PTCR陶瓷材料。通过XRD 、SEM显微结构分析;复阻抗测试,估计晶粒和晶界电阻值,探讨了Sb2O3和Ta2O5的作用机制。
The effect of double-donor doping of Sb2O3+Ta2O5 on PTC characteristic of the low resistivity BaTiO3-based ceramics was investigated. The resistivity is 4.59 W穋m at room temperature and ratio of lg(Rmax/Rmin) 3.4 when the content of Sb2O3 and Ta2O5 are 0.1 mol% and 0.01 mol% respectively. The mechanism of the effect of Sb2O3 and Ta2O5 on BaTiO3-based PTC ceramics was investigated by XRD, SEM etc.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第11期35-37,共3页
Electronic Components And Materials
关键词
双施主掺杂
PTC特性
电阻率
升阻比
double-donor doping
PTC characteristic
resistivity
ratio of lg(Rmax/Rmin)
