摘要
从红外隐身、雷达隐身原理及电磁波在半导体表面层的吸收和反射的机理出发 ,从理论上分析了掺杂氧化物半导体材料同时实现红外和雷达隐身的可能性 ,指出ZAO(掺铝氧化锌 )作为红外和雷达隐身复合隐身材料是很有发展前景的。
On the mechanisms of infrared camouflage, radar camouflage and the absorption and reflection of electromagnetic wave on the surface of semiconductor materials, the possibility of doped semiconductor oxide being tailored to infrared and radar multifunctional camouflage was analyzed theoretically. It was pointed out that semiconductor oxides, ZAO (Al-doped Zinc Oxide), may have a good prospect in the field of multi-functional camouflages.
出处
《红外技术》
CSCD
北大核心
2003年第4期77-80,共4页
Infrared Technology
