摘要
在对Si1-xGex材料多子迁移率模型分析基础上,建立了Si1-xGex材料电阻率与其Ge组分、掺杂浓度关系的曲线图谱.经过对半导体材料掺杂浓度各种表征技术的分析和实验研究,提出了采用四探针法表征Si1-xGex材料掺杂浓度的技术.该表征技术与Si材料掺杂浓度的在线检测技术相容,且更加简捷.通过实验及对Si1-xGex材料样品掺杂浓度的现代理化分析验证了其可行性.
Based on a new majority carrier mobility model of the strained Si 1-x Ge x material, the relation between resistivity and doping concentrations with different Ge compositions has been obtained. With this relation, the doping concentration in strained Si 1-x Ge x can be measured by using a collinear four probe array. The characterization technique is compatible with the on line measure of the doping concentration in Si but much simpler and more convenient.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2003年第2期255-258,280,共5页
Journal of Xidian University
基金
模拟集成电路国家重点实验室基金资助项目(99JS09 3 1DZ0111)
