摘要
硅基低压MOSFET器件广泛应用于小电流驱动、电源控制模块等高科技领域,MOSFET器件失效主要是由生产过程中的工艺异常或缺陷导致。本文介绍了热点分析/聚焦离子束-扫描电镜的高精度检测方法,该方法可快速检查沟槽MOSFET器件电学性能及膜层结构失效。本文结合沟槽MOSFET的制备流程,阐明了由于多晶硅淀积工艺异常及过量刻蚀所导致的管芯边缘区域漏电失效并分析了其中原因,列举了改善及预防措施细则,为进一步优化刻蚀沉积设备提供了工艺依据。
Silicon based low voltage MOSFET devices have intensive applications in high-tech fi elds such as low current driven components and power control modules.The failures of MOSFET devices are mainly caused by process exception or defects in the production process.A high-precision detection method via Hotspot analysis/FIB-SEM is discussed,by which electric properties and layer structure failure of trench MOSFET devices are checked quickly.In context of trench MOSFET devices manufacturing process,edge and pick-up area electricity leakage failure caused by polycrystalline silicon deposition process exception and over etching is elucidated.The methods to prevent and improve such failure for further updates of etching and deposition equipment are listed.
作者
陈丹旻
吕文利
陈龙
陈峰武
龚欣
龚肖
邵义东
CHEN Danmin;LYU Wenli;CHEN Long;CHEN Fengwu;GONG Xin;GONG Xiao;SHAO Yidong(Hunan SemicoreVac Co.,Ltd.,Changsha 410111,China;The 48th Research Institute of CETC,Taiyuan 030024,China)
出处
《电子工艺技术》
2023年第3期47-49,共3页
Electronics Process Technology
关键词
功率器件
漏电测试
沟槽工艺
刻蚀
power device
current-leakage failure analysis
trench process
dry etch
