摘要
目的通过向CdO薄膜中掺杂ZnO,在尽量不影响其电学性质的前提下,拓宽禁带宽度并改善性能。方法通过磁控射频溅射分别在玻璃基底和硅<111>基底上沉积了一系列Cd_(1-x)Zn_xO透明导电薄膜。利用XRD、紫外可见分光光度计和霍尔效应测量仪,测试了薄膜的结构、光学和电学性能。结果随着Zn掺杂含量的增加,薄膜结构会发生变化:x<0.25时,薄膜结果为岩盐相;0.25<x<0.5时,薄膜结构为混合相;x>0.5时,薄膜结构变成了纤锌矿相。掺杂Zn后,薄膜吸收边可以提升到3eV左右,同时其电阻率为6.69×10^(-4)?·cm,载流子浓度为7.92×10^(20) cm^(-3),与纯CdO薄膜电学性质相近。结论对CdO薄膜进行一定量的ZnO掺杂,可以在不影响其电学性质的前提下提高禁带宽度,从而使薄膜具有良好的光电性能。
The work aims to expand forbidden bandwidth and improve performance of CdO film by doping ZnO to it with- out affecting its electrical property. A series of Cdl-xZnxO transparent conductive films were deposited on glass substrate and silicon 〈111〉 substrate by adopting RF magnetron sputtering. Structure, optical and electrical properties of the films were tested by using XRD, UV spectrophotometer and Hall effect measuring instrument. The structure of films turned to 3 phases as the Zn doping content increased： RS （rock salt） phase if x〈0.25, mixed phase if 0.25〈x〈0.5, and WZ （wurtzite） phase if 0.5〈x〈 1. After Zn doping, the absorption edge of the films could be increased to nearly 3 eV, and resistivity was 6.69× 10-4 cm, carrier concen- tration was about 7.92 ×1020 cm-3, which was similar to electrical properties of CdO film. CdO film doped with a certain amount of ZnO can improve forbidden bandwidth without affecting its electrical properties, so that the film has good photoelectric properties.
出处
《表面技术》
EI
CAS
CSCD
北大核心
2017年第10期72-75,共4页
Surface Technology
基金
国家基础科学人才培养基金项目(J1103207)
国家自然科学基金项目(51602302)~~
