摘要
基于UMC 0.18μm CMOS工艺,提出一种适合紫外/蓝光探测的探测器,该器件由栅体互联的NMOS晶体管和横向/纵向光电二极管构成.其中,浅结的光电二极管由UMC工艺中Twell层(浅P阱)和Nwell层形成,以增强其对紫外/蓝光的吸收,栅体互联的NMOS晶体管可以放大光电流,提高探测器的灵敏度和动态范围.仿真结果表明,本文设计的紫外/蓝光探测器具有低的工作电压和暗电流,对300~550nm波长范围的光具有高的响应度和宽的动态范围.在弱光条件下(光强小于1μW/cm2),响应度优于105 A/W,随着光强增大,响应度逐渐降低,但总体仍超过103 A/W.
Ultraviolet/blue photodetector based on UMC 0.18μm CMOS technology is proposed,which is constructed by a lateral/vertical PN diode and an NMOS transistor.The shallow PN diode formed by the Twell layer and Nwell layer is used to enhanced the absorption efficiency of Ultraviolet/blue light and separate the photogenerated carriers.Since the gate of NMOS is tied with the Twell layer,it can be adjusted by the Twell voltage induced by the incident illumination.The sensitivity and the dynamic range of the proposed detector are improved.The simulation results show that the detector has extra high responsivity and wide dynamic range for the wavelength window of 300～ 550 nm.Under the condition of weak light （〈1 tμW/cm2）,the detector has a responsivity more than l05 A/W.With the increase of light intensity,the responsivity decreases but it still better than 103 A/W in the interesting range.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2017年第9期32-37,共6页
Acta Photonica Sinica
基金
国家自然科学基金(Nos.61474081
11673019)资助~~
关键词
光电器件
响应度
弱光探测
紫外/蓝光
CMOS工艺
动态范围
选择性
Photoelectric devices
Responsivity
Weak-light detection
Ultraviolet/blue light
CMOS technology
Dynamic range
Selectivity
