摘要
制备了一种GaN MOSHEMT器件,器件栅长为0.35μm,栅介质为HfO_2,并对其进行两端和三端的IV特性测试,以及界面态导致的栅延迟问题进行了测试和表征。测试结果表明,本文制备的GaN MOSHEMT器件栅电流小、栅压摆幅大、击穿电压高,适合于微波功率应用。
A GaN MOSHEMT device with 0. 35 μm gate length was fabricated employing HfO2 as gate dielectric. Two-terminal and three-terminal I-V characteristics were tested after device fabrication. It is showed that the GaN MOSHEMT device exhibited a small gate current, a large gate voltage swing and a high breakdown voltage, which is quite suitable for microwave power application.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2017年第1期6-9,共4页
Research & Progress of SSE
关键词
绝缘栅
击穿电压
栅延迟
界面态
insulated gate
breakdown voltage
gate lag
interface states
