摘要
We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.
We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.
基金
Project supported by the Basic Science Research Fund for the Central Universities （Grant No. K50511250009）.
