摘要
本文采用射频磁控溅射方法,制备了非晶掺钨氧化铟(a-IWO)薄膜及其薄膜晶体管(TFTs),并探讨了溅射过程中氧流量对a-IWO薄膜及其TFTs性能的影响.研究发现,随着沉积过程中氧流量的增加,a-IWOTFTs器件的饱和迁移率降低,阈值电压正向偏移,说明溅射过程中氧流量的增加有效抑制了a-IWO沟道层中氧空位的产生,降低了载流子浓度.当溅射过程中氧气/氩气流量比为2∶28时,制备的TFT器件饱和迁移率为27.6cm2·V-1·s-1,阈值电压为-0.5V,电流开关比为108.
Amorphous tungsten doped indium oxide（a-IWO）thin films and a-IWO thin film transistors（TFT）were prepared by rf sputtering with different oxygen flow rates.The influence of oxygen flow rates on a-IWO thin films and the electrical characteristics of the a-IWO-TFTs was investigated.It is found that the mobility decreases and threshold voltage positively shifts with increasing oxygen flow rate.The facts reveal that the increasing of oxygen flow rate can suppress the carrier concentration of the a-IWO channel layer.When the ratio of O2/Ar flow rate is 2∶28,the TFT device with saturation mobility of 27.6cm2·V^-1·s^-1,threshold voltage of-0.5Vand drain current on-off ratio of 108 is obtained.
出处
《复旦学报（自然科学版）》
CAS
CSCD
北大核心
2016年第6期766-771,共6页
Journal of Hehai University：Natural Science
基金
国家自然科学基金(61136004,61471126)
