摘要
针对GaN基发光二极管中p-GaN与透明导电薄膜ITO之间的接触进行研究,尝试找出透明导电层ITO的优化制程条件。将在不同氧流量、ITO厚度及退火温度下制备的透明电极ITO薄膜应用于GaN基发光二极管,来增加电流扩展,减小ITO与p-GaN欧姆接触电阻,降低LED工作电压及提高透过率、增强LED发光亮度。将ITO薄膜应用于218μm×363μm GaN基发光二极管LED,分析其在20 mA工作电流条件下正向电压和光输出功率的变化,在优化条件下制得的蓝光LED在直流电流20 mA下的正向电压3.23 V,光输出效率为23.25 mW。
The contact properties of p-GaN and ITO thin film in the GaN-based blue light-emitting diodes（LEDs） were studied to search the optimized process conditions.ITO films prepared with different O2 flow,ITO thicknesses and annealing temperatures were used in the GaN-based LEDs and the purpose was to increase the current expansion,reduce the forward voltage of LEDs and enhance the brightness.The ITO film was used for the 218 μm×363 μm blue light-emitting diodes,the I-V characteristics and the light output power were estimated.LEDs made under the optimized conditions exhibited the forward voltage of 3.23 V and output power of 23.25 mW at 20 mA current injection.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第5期371-374,389,共5页
Semiconductor Technology
关键词
氧化铟锡
透明导电薄膜
p型氮化镓
欧姆接触
发光二极管
indium tin-oxide（ITO）
transparent conductive film
p-GaN
ohmic contact
light-emitting diode（LED）
