摘要
采用CGSim晶体生长软件,对现有工业单晶炉中的加热器位置进行优化并分析了其对热场、固液界面、晶体中温度梯度和氧含量的影响。结果表明,随加热器的上移,功率消耗略有降低,熔体内的温度梯度逐渐下降,在高埚位的生长条件下可以适当提升拉晶速率;同时,固液界面也趋于平坦,晶体中的温度梯度有所减少,从而可以有效地抑制缺陷的形成。另外,晶体中的氧含量也有一定程度的下降。可以得出,在晶体等径生长初期,提高加热器的位置是降低晶体生长成本和提升晶体品质的途径之一。
CGSim software was employed to analyze the influence of heater position on the hot-zone filed, solid-liquid interface shape, temperature gradient and oxygen concentration in the grown silicon for the industrial-scale CZ furnace. The results show that, as elevating heater position, the power consumption and temperature difference in melt have been decreased, resulting to increasing the crystallization rate of silicon crystal under higher crucible position condition. At the same time, coupling of flattening the solid- liquid interface, temperature gradient in the grown silicon has been decreased obviously, which could suppress the defect formation in the crystal. Moreover, the oxygen concentration in the silicon also has been decreased slightly. It could be concluded that, at the early stage of crystal growing, elevating the heater position is an effective method to decrease the production cost and to improve the crystal quality for solar-grade single crystal silicon.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2016年第11期3607-3612,共6页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金(61366005)
2015宁夏自治区科技攻关项目
关键词
单晶硅
温度梯度
固液界面
氧含量
single crystal silicon
temperature gradient
solid-liquid interface
oxygen concentration
