摘要
电子产品的日益发展要求更高的封装密度、更好的性能和更小的尺寸,使得电子器件所承载的功率密度显著升高,由此产生严重的焦耳热问题,导致作为主要散热通道的微互连焊点内将产生较高的温度梯度,这将诱发金属原子的热迁移,并引起严重的可靠性问题。对近年来有关Sn-Pb、Sn-Ag、Sn-Ag-Cu、Sn-Bi和Sn-Zn等微互连焊点中金属原子的热迁移行为和关键问题进行综合分析,总结热迁移对微互连界面反应的影响,阐述金属原子热迁移的机理和驱动力,并归纳传递热Q*的计算方法及微互连焊点中主要金属元素的Q*值。最后,指出微互连焊点热迁移研究存在的主要问题,并对其未来研究发展趋势进行了展望。
The electronic products are increasingly demanding for higher packing density, better performance and smaller size, resulting in significant increase of power density applied on devices. The issue of Joule heating becomes more severe and a temperature gradient will form in the solder joints which act as the main heat dissipation channel. As a result, thermomigration of metal atoms will occur, which causes serious reliability problems of the solder joints. The thermomigration of metal atoms in Sn-Pb, Sn-Ag, Sn-Ag-Cu, Sn-Bi, Sn-Zn micro interconnect solder joints as well as the key issues were analyzed synthetically. The effect of thermomigration on interfacial reaction was included. The mechanism and the driving force of thermomigration of metal atoms were explained. The calculation methods for heat transport （Q＊） and the values of Q＊ of main metal elements in solder joints were summarized. The main issues and trends of the studies on thermomigration in micro interconnect solder joints were finally proposed.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2015年第8期2157-2166,共10页
The Chinese Journal of Nonferrous Metals
基金
国家自然科学基金资助项目(51301030)
中央高校基本科研业务费专项资金项目(DUT14QY45)
关键词
电子封装
互连焊点
钎料
热迁移
界面反应
金属间化合物
electronic packaging
interconnect solder joint
solder
thermomigration
interracial reaction
intermetalliccompound
