摘要
采用脉冲准分子激光大面积扫描沉积技术 ,在Si(111)单晶衬底上沉积了多晶V2 O5 薄膜 ,经 3 0 0℃以上退火处理得到了具有高c -轴取向生长的V2 O5 薄膜 .3 0 0℃以上热退火处理的薄膜表面具有正常的化学计量比 (无氧缺位 ) ,晶粒间界明显 ,晶粒呈针棒状 ,晶粒尺寸在10 0～ 2 0 0nm之间 .采用X射线衍射 (XRD)、Raman光谱 (RS)、Fourier红外光谱 (FT -IR)及透射电镜扫描附件 (STEM )对沉积及不同温度下退火处理的样品进行了结构分析 .研究结果表明 :V2 O5 /Si薄膜经 40 0℃热处理后表面部分处于低价态的钒离子已被氧化为V2 O5 .
Work concerning oriented crystal formation and structural properties of the films deposited on Si substrate with V2O5 target by PLD was reported. VOx thin films were successfully synthesized on Si(111) by using scanning laser ablation technique. The structural properties of the thin films of as-deposited and annealed were analysed by using a scanning accessory of transmission electron microscope (STEM) and X-ray diffraction (XRD), Fourier transformation infrared spectrum (FT-TR) and Raman spectrum (RS). The as-deposited thin film shows lower orientation with polycrystalline structure but those annealed at above 300°C show highly c-axis oriented growth with orthorhombic structure. The films become more stoichiometric and the grains grow bigger with higher annealing temperature. There are normal chemical estimate ratio (no oxygen vacancy), clear grain boundary and uniformly distributed stick grain on the film surface annealed at above 300°C, the grain size is 100-200 nm. The annealed films are good candidates for use as cathodes in thin film optical devices for their c-axis orientation growth and nano-crystalline structures.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2001年第1期13-17,共5页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金资助项目!(19775 0 16)
湖北省自然科学基金资助项目!(99J0 49)
关键词
五氧化二钒薄膜
高c-轴取向
脉冲准分子激光沉积
结构
Annealing
Polycrystalline materials
Pulsed laser deposition
Structural analysis
Vanadium compounds
