摘要
利用同步辐射和铁磁共振研究了使用 CH3CSNH2 硫钝化的 Ga As( 1 0 0 )表面铁超薄膜的电子结构和磁性 .实验结果表明 ,硫钝化能阻止 As向铁薄膜层的扩散 ,减弱 As和 Fe的相互作用并增强了在 Ga As( 1 0 0 )表面生长的铁超薄膜的磁性 .
The electronic structure and magnetism of Fe overlayer evaporated on sulfur passivated GaAs(100) by using CH\-3CSNH\-2 have been studied with synchrotron radiation photoemission (SRPES) and ferromagnetic resonance (FMR).The experimental results show that sulfur passivation can prevent As from diffusing into Fe overlayer,weaken the reaction of As with Fe and enhance the magnetism of Fe films.
基金
国家教委博士点专项科研基金
国家自然科学基金!(批准号 :1 9574 0 4 2 )
关键词
硫钝化
半导体界面
电子结构
磁性
sulfur passivation
semiconductor interface
electronic structure
magnetism
