摘要
利用同步辐射光电发射和铁磁共振（ＦＭＲ）研究了Ｃｏ／ＧａＡｓ（１００）界面形成以及Ｃｏ超薄膜的磁性质．结果表明，在低覆盖度（约为０２ｎｍ）下，Ｃｏ吸附原子与衬底发生强烈的界面反应，在覆盖度为０９ｎｍ时，形成稳定的界面．从衬底扩散出的Ｇａ原子与Ｃｏ覆盖层合金化，而部分Ａｓ原子与Ｃｏ原子发生反应，形成稳定的键合，这些反应产物都停留在界面处很窄的区域（０３—０４ｎｍ）内．另一部分Ａｓ原子偏析在Ｃｏ覆盖层表面．结合理论模型，详细地讨论了界面结构及Ｇａ，Ａｓ原子的深度分布．ＦＭＲ结果表明，生长的Ｃｏ超薄膜具有较好的单晶特性和化学均一性．
Abstract Synchrotron radiation photoemission and ferromagnetic resonace(FMR) measurement have been used to study the interface formation of Co/GaAs(100) as well as the magnetic property of ultrathin Co films.The results show strong interface disruption and reaction between overlayer and substrate at low Co coverage(～0.2nm),At the coverage of 1nm,a stable interface forms.The Ga atoms in bulk GaAs may exchange with Co atoms and diffuse into Co overlayer,while a certain amount of As reacts with Co atoms,forming stable Co As bonding.These reaction products lie in the narrow region near the interface(0.3—0.4nm).The remanent part of As will segregates on the surface of Co overlayer.Based on a theoretical model,the interface structure and concentration profile are discussed in detail.The FMR result demontrates that the ultrathin Co film consists of good quality crystals and has a chemical homogeneity.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第4期692-698,共7页
Acta Physica Sinica
基金
国家自然科学基金
