摘要
本文研究了90nm CMOS工艺下栅氧化层厚度为1.4 nm沟道长度为100 nm的轻掺杂漏(LDD)nMOSFET栅电压V_G对栅致漏极泄漏(GIDL)电流I_D的影响,发现不同V_G下ln(I_D/(V_(DG)-1.2))-1/(V_(DG)-1.2)曲线相比大尺寸厚栅器件时发生了分裂现象.通过比较V_G变化下ln(I_D/V_(DG)-1.2))的差值,得出V_G与这种分裂现象之间的作用机理,分裂现象的产生归因于V_G的改变影响了GIDL电流横向空穴隧穿部分所致.随着|V_G|的变小,ln(I_D/(V_(DG)-1.2))曲线的斜率的绝对值变小.进一步发现不同V_G对应的1n(I_D/(V_(DG)-1.2))曲线的斜率c及截距d与V_G呈线性关系,c,d曲线的斜率分别为3.09和-0.77.c与d定量的体现了超薄栅超短沟器件中V_G对GIDL电流的影响,基于此,提出了一个引入V_G影响的新GIDL电流关系式.
The influence of gate voltage V_g on gate induced drain leakage（GIDL） current is studied in LDD nMOSFET with a gate oxide of 1.4nm and a channel length of 100nm.It is found that the split phenomena of ln（I_D/（V_（DG）-l.2））-1/（V_（DG）-1.2） curves under different V_G values occurs,which are different from the large MOSFET.Through comparing varieties of ln（I_D/（V_（DG）-1.2）） of different V_g values,the mechanism of this split phenomenon is obtained.This is ascribed to the change of the hole-tunneling part of GIDL current under different Vg values.The absolute value of ln（I_D/（V_（DG）-l-2）） curve slope decrease with ｜V_g｜ value decreasing.It is further found that the values of slope c and intercept d of ln（I_D/（V_（dg）-1 -2）） curves are linear with V_g and the slopes of c and d are 3.09 and -0.77,respectively.The values of c and d quantificationally show the influence of V_G on the GIDL current in an ultra-thin ultra-short MOSFET.On the basis of these results,a new GIDL current model including Vg is proposed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第2期509-515,共7页
Acta Physica Sinica
基金
西安应用材料创新基金(批准号:XA-AM-201012)
西安邮电学院青年教师科研基金(批准号:ZL2010-19)资助的课题~~
