Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics 被引量：1

Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics

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摘要 MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the Ge/HfON interface.HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing.A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier.Using this method,well behaved capacitance–voltage and current–voltage characteristics were obtained.Finally hystereses are compared under different process conditions and possible causes are discussed. MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the Ge/HfON interface.HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing.A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier.Using this method,well behaved capacitance–voltage and current–voltage characteristics were obtained.Finally hystereses are compared under different process conditions and possible causes are discussed.

作者胡爱斌徐秋霞

机构地区 Institute of Microelectronics

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第10期33-37,共5页 半导体学报（英文版）

基金 supported by the State Key Development Program for Basic Research of China(No.2006CB302704)

关键词 Ge MOS capacitor HFON Ge oxides silicon nitride Ge MOS capacitor HfON Ge oxides silicon nitride

分类号 TN304 [电子电信—物理电子学]

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