摘要
针对RF MEMS开关释放时间过长的问题,提出了在开关梁上设计一个上悬梁的方法,以增大开关梁所受压膜阻尼,抑制开关梁在平衡位置附近的振动,从而缩短RF MEMS开关的释放时间。给出了这种方法的相关理论、等效模型及仿真结果。通过ANSYS仿真雷声梁在设置上悬梁前后的动态特性:对于4μm高的梁,释放时间由设置上悬梁前的103μs(0.5μm厚),176μs(0.8μm厚)和232.5μs(1.1μm厚)分别下降为53.3,89和123.4μs;对于3μm高0.5μm厚的梁,释放时间由43.3μs下降为22μs。仿真结果均表明:在标准大气压下,当雷声梁高度为上悬梁高度的一半时,加入上悬梁后雷声梁的释放时间约为原来的1/2,即开关速度约为原来的2倍。
For the long release time of RF MEMS switches,a design method of top-beam on switch beam was presented to increase the squeeze-film damping beared by the switch beam,inhibit the switch beam vibration around the equilibrium position,and the RF MEMS switch release time was shortened.The calculation theory,equivalent model and simulation results based on the method were given.The dynamic characteristics of Raytheon beam before and after seting a top beam were simulated through ANSYS.For 4 μm high beam,the release time reduces from 103（0.5 μm thick）,176（0.8 μm thick） and 232.5 μs（1.1 μm thick） without a top beam to 53.3,89 and 123.4 μs with a top beam,respectively.For the 3 μm high beam with the thickness of 0.5 μm,the release time reduces from 43.3 μs to 22 μs after designing a top beam.The simulation results show that when the height of Raytheon beam is half of the top beam,the release time of Raytheon beam with a top beam is about half of the original release time under standard atmospheric pressure,that is,the speed of the switch is about two times of the original speed.
出处
《微纳电子技术》
CAS
北大核心
2011年第11期714-719,732,共7页
Micronanoelectronic Technology
基金
国家自然科学基金委员会和中国工程物理研究院联合基金资助项目(11176006)
国家部委基金项目(9140A23070311DZ0210)
中国工程物理研究院科学技术发展基金资助项目(2008A0403016)
