摘要
介绍了一种掺氦的等离子增强化学气相淀积（ＰＥＣＶＤ）氮化硅薄膜工艺技术，可调控氮化硅薄膜的应力，从而在较低的射频功率下生长低应力的氮化硅薄膜。文中对其机理作了初步的探讨。所生长的氮化硅薄膜的折射率和腐蚀速率没有明显变化，对器件，尤其是对砷化镓异质结器件几乎没有应力损伤。
In this paper, a good method for PECVD silicon nitride film stress control with the addition of helium gas is recommended. In this way, silicon nitride film with lower stress can be deposited under lower RF power. And the basic principle was discussed elementally. The deposited film has the similar index of refraction and the similar etch ratio in diluted HF to the normal silicon nitride film, and almost has no stress damage to the GaAs microwave devices, especially to the GaAs heterojunction devices.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1999年第4期448-452,共5页
Research & Progress of SSE
