摘要
本文根据实际测量结果,一叙述了半导体衬底制片质量对外延生长的影响。特别是,讨论了在 GaAs、InP 衬底中,产生于切片、研磨和抛光加工过程中的机械损伤的影响。
Based on actual measurement results,the influence of process quali- ty of semiconductor substrate wafers on epitaxial growth is described.In particular,the effect of mechanical damagec resulted from slicing,grinding and polishing process on the quality of GaAs,lnP substrates is discussed
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第3期78-81,88,共5页
Semiconductor Optoelectronics
关键词
半导体
衬底
应力损伤
外延生长
Stress Damages of Semiconductor
Epitaxial Growth
