摘要
激光远场光强分布一般与输出功率大小有关,在相同功率水平下,不同激光二极管的远场分布往往不同,因此需要一种模型能全面地描述不同半导体激光器在各种情况下的远场分布。根据半导体激光器发出的激光具有部分相干性和双光束的部分相干性原理,利用瑞利-索莫菲衍射积分公式,提出并推导得出了描述半导体激光远场分布的新理论模型。在激光二极管远场光强慢轴方向理论模型可表示为I(0,θ,z)=I0(z)cos4θ.[1+2γcos(4πλasinθ+φ)]exp[-2π2qλ2sin2θ],已观察到的远场光强分布与曲线符合得更准确。和已有的一些理论模型相比,新模型不但有可靠的推理论据,而且能够通过q、γ、φ等参数的调整来描述不同激光二极管光强的远场分布。
Generally,the far-field intensity distributions vary with the output power,and in the same power level,the far-field distributions of different laser diodes often are not the same,therefore,we need a model which can fully describe the far-field distributions of different semiconductor lasers under various circumstances.According to the theory that laster emitting from the semiconductor laser has property of partial coherence and double-beam partial coherence principle,employing the Rayleigh-Sommerfeld diffraction formula,a novel theoretical model that can describe the far-field distribution of semiconductor laser is proposed and obtained.Compared with some of the existing theoretical models,the new model is not only reliable on reasoning arguments,but also can adjust the parameters such as q、γ、φ ect to describe the far-field intensity distribution of different laser diode.The theoretical model of the far-field intensity distribution in the slow axes of laser diode can be expressed as I（0,θ,z）=I0（z）cos4θ[1＋2γcos（4πaλsin θ＋φ）]exp[-2π2qλ2sin2θ],and it meets the observed far-field intensity distribution curve more accurately.
出处
《重庆师范大学学报（自然科学版）》
CAS
2010年第6期73-78,共6页
Journal of Chongqing Normal University:Natural Science
基金
重庆市科委攻关项目(No.8180)
重庆市教委应用基础研究项目(No.KJ060816)
关键词
半导体激光器
能流密度
部分相干光
远场分布
发光元
laser diode
energy density
partially coherent light
far-field distribution
emitter unit
