期刊文献+

描述激光二极管远场光强分布的理论模型 被引量:7

Theoretical models describing far-field intensity distributions of laser diode
在线阅读 下载PDF
导出
摘要 介绍了描述激光二极管远场光强分布的几种典型理论模型,并与实验结果作了详细比较。结果表明:激光二极管的传输和远场特性应当用非傍轴理论描述,并且远场光强分布一般与输出功率大小有关。在不同功率水平下,异质结激光二极管快轴与慢轴方向的远场行为应选用不同的模型模拟。此外,还对厄米-高斯模型做了修正,考虑了奇数阶厄米-高斯模的贡献,并用厄米-高斯模的非相干叠加代替厄米-高斯模的相干叠加。改进的厄米-高斯模型能更好描述100 mW双异质结GaAlAs LD慢轴方向的远场光强分布。 This paper presents a detailed comparison of several typical theoretical models describing far-field intensity distributions of laser diode with the experimental results in the literature. It is found that the propagation and far-field properties of laser diode have to be described by the non-paraxial theory, and the far-field intensity distributions vary with the output power in general. Different models should be suitably chosen to simulate the far-field behavior in the fast and slow axes of heterostructure laser diode at different power levels. In addition, the Hermite-Gaussian(H-G) model is modified, where the contributions of the odd-order H-G modes are included and the coherent superposition of H-G modes is replaced by the incoherent superposition of H- G modes. The improved model is in better agreement with the experimental data in the slow axis direction of double heterostrueture GaAlAs laser diode at 100 mW output power.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2008年第2期201-206,共6页 High Power Laser and Particle Beams
基金 国家自然科学基金资助课题(10574097) 重庆市高校光学工程重点实验室开放课题(0701)
关键词 激光二极管 远场光强分布 修正的厄米-高斯模型 相干和非相干叠加 Laser diode Far-field intensity distribution Modified Hermite-Gaussian model Coherent and incoherent superpositions
  • 相关文献

参考文献9

二级参考文献18

  • 1张彬,吕百达,蔡邦维.高斯-谢尔模型光束的变换特性[J].光学学报,1996,16(3):378-381. 被引量:1
  • 2曾小东,Appl Opt,1993年,32卷,24期,4491页
  • 3Fukuda M. Degradation modes of semiconductor laser used in optical fiber transmission system[A]. Proc of SPIE[C]. 1992,1634:184-191.
  • 4Pittroff W, Erbert G, Beister G,et al. Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy[J]. IEEE Transactions on Advanced Packaging,2001,24(4):434-440.
  • 5Hans-Georg T,Jim H,Bor M,et al. Compact high brightness and high power diode laser source for materials processing[A]. Proe of SPIE[C]. 2000,3945:23-31.
  • 6Kathrine A. Forrest, James B. Abshire. Time evolution of pulsed far-field patterns of GaAlAs phase-locked laser-diode arrays[J].IEEE Quant. Electron. , 1987, 23(8) : 1287-1290.
  • 7Lee W. Casperson, Anthony A. Tovar. Hermite-sinusoidal-Gaussian beams in complex optical system[J]. J. Opt. Soc. Am.(A), 1998, 15(4): 954-963.
  • 8Baida Lü, Hong Ma, Bin Zhang. Propagation properties of cosh-Gaussian beams[J]. Opt. Commun.. 1999, 166(4): 165-171.
  • 9Xiaodong Zeng, Amir A. Naqwi. Far-field distribution of double-heterostructure diode laser beams[J]. Appl. Opt., 1993, 32(24): 4491 -4494.
  • 10曾小东,穆美丽.半导体激光器光束远场特性研究[J].光学学报,1997,17(8):1086-1088. 被引量:11

共引文献37

同被引文献94

引证文献7

二级引证文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部