摘要
对于以电压源方式驱动功率MOSFET管,随着开关频率的提高,其开关损耗将显著增加。以此为切入点对电流源驱动功率MOSFET管进行了研究。在对电流源驱动MOSFET管原理性分析的基础上,通过详细地分析功率MOSFET管的开关过程,建立MOSFET管开关损耗模型,求解得到漏极电流、漏源电压与栅源电压之间关系,证明了电流源驱动在减少开关时间和开关损耗上的优越性。在开关频率为1 MHz、输入电压为12 V、输出电压和电流分别为1.3 V和25 A的低压大电流实验平台上进行了验证,实验结果证明了所提出的MOSFET管损耗模型的正确性。
As the switching loss of VSD（Voltage Source Driver） MOSFET increases with the increase of switching frequency,the switching loss of CSD（Current Source Driver） MOSFET is researched. Based on the study of operating principle,its detailed switching procedure is analyzed and an accurate analytical loss model is established to obtain the relationship among the drain current,drain-to-source voltage and gate-to -source voltage,which proves the superiority of CSD in reducing the switching time and loss. Tests are carried out with 1 MHz switching frequency,12 V input vohage,1.3 V output voltage and 25 A output current, which proves the correctness of the proposed model.
出处
《电力自动化设备》
EI
CSCD
北大核心
2010年第10期50-53,共4页
Electric Power Automation Equipment
基金
国家自然科学基金资助项目(50777001)
安徽省自然科学基金重点项目(KJ2010A342)~~
关键词
电流源驱动
MOSFET
损耗分析
BUCK变换器
高频
低压大电流
current source driver
MOSFET
power output voltage and high output current loss analysis
Buck converter
high frequency
low
