摘要
用 AsCl_3/Ga/H_2气相外延系统在 GaAs 衬底上生长出GaAs 外延层并制成 Au-GaAs 肖特基结构.利用高分辨率深能级瞬态谱(HDDLTS)仪研究了外延层中深能级的特性.结果表明,缺陷和杂质在外延层中引进若干较高浓度的深能级,经退火后缺陷深能级会被消除.
GaAs epitaxial layer was grown on GaAs substrate using AsCl_3/Ga/H_2 vapour-phase epitaxial system and was made into Au-GaAs Schottky structure.Using high discriminability deep level transient spectroscopy(HDDLTS),we studied the chara- cteristics of deep level in the epitaxial layer.It was showed that several deep levels with high concentration existing in epitaxial layer are produced by defects and impurities,and the defects deep level could be eliminated by annealling.
出处
《南京邮电大学学报（自然科学版）》
北大核心
1989年第2期111-114,共4页
Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition
关键词
外延层
走域能级
杂质
Epitaxial layer
Localized level
Pollutions
