摘要
采用反应射频磁控溅射的方法在纯氮气气氛下、氮气流量为12 sccm、衬底温度为100℃的条件下,在玻璃基底上成功制备了氮化铜(Cu3N)薄膜。XRD显示薄膜择优[100]晶向生长。用扫描电子显微镜(SEM)和原子力显微镜(AFM)观察了样品的表面形貌,发现样品表面平整、结构紧密。用四探针法检测了薄膜的霍尔特性,发现随温度的降低薄膜的霍尔系数、霍尔电阻率均增加。霍尔迁移率在高温范围也呈降低的趋势,但是变化的范围比较小,在低温范围又有所增加。随温度的降低薄膜的载流子浓度降低。我们还通过变温的霍尔系数估算了氮化铜薄膜的禁带宽度约为1.35 eV。
CuaN thin film was prepared by reactive radio-frequency （RF） magnetron sputtering on glass substrate with the substrate temperature of 100℃, and the pure N2 flow rate of 12sccm. XRD pattern showed a preferred [ 100] orientation of the film. SEM and AFM images showed that the film surface is smooth and tightly structured. The Hall effect properties of the film were characterized by four-probe method, and the result showed that both the Hall coefficient and the Hall resistivity increase with temperature decreasing. The Hall mobility decreases in a short range at high temperature region, but somewhat increases in low temperature region. We also figured out the value of the band gap at about 1.35eV from the Hall coefficients at various temperatures.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第5期1108-1112,共5页
Journal of Synthetic Crystals
基金
甘肃省自然科学基金重点项目资助(No.ZS021-A25-022-C)
