摘要
采用熔炼-区熔法制备了N型赝三元取向晶体,测量了材料的电导率、Seebeck系数和导热系数.利用霍尔效应原理搭建了霍尔系数测试平台,测量了N型赝三元取向晶体材料的载流子浓度.研究结果表明,材料的载流子浓度为0.2×1019 cm-3,测量结果在数量级上与热电材料的最佳载流子浓度值接近.
By smelting-zone melting method,N-type pseudo-ternary oriented crystal is prepared in this paper.The electrical conductivity,the Seebeck coefficient and the thermal conductivity of the material are measured.In addition,the test platform of the Hall coefficient using Hall-effect principle and measure the carrier concentration of N-type pseudo-ternary oriented crystalline materials are set up.The results show that the carrier concentration of the material is 0.2 × 1019 cm-3.The measurement result is close to the best thermoelectric materials carrier concentration values in the order of magnitude.
出处
《哈尔滨师范大学自然科学学报》
CAS
2011年第4期40-42,共3页
Natural Science Journal of Harbin Normal University
基金
黑龙江省教育厅科学技术研究项目(11533036)
关键词
热电材料
电学性能
载流子浓度
Thermoelectric materials
Electrical properties
Carrier concentration
