摘要
为研究交流脉冲电源占空比的变化对纯铝微弧氧化的影响,设计了在恒流条件下(J=75mA.cm-2)进行从2%到18%不同占空比下对纯铝进行微弧氧化实验。研究发现,陶瓷膜的主要成分为稳定态的-αA l2O3和亚稳态的-γA l2O3,随着占空比的提高,-αA l2O3逐渐成为氧化膜的主要成分,而氧化膜的表面则越来越粗糙。当占空比为10%时,得到最大的氧化膜厚度和最佳的氧化膜截面形貌。
In order to reveal the effects of positive-pulse duty cycle of a AC pulse power on mricoarc oxidation, a constant current density（75mA·cm^-2） and a series of positive-pulse duty cycles which ranged from 2% to 18% were applied. The formed oxide film are mainly composed of α-Al2O3 and γ-Al2O3. As the duty cycle increases, α-Al2O3 becomes the predominant phase, and the surface of the oxide film gets coarser. The oxide film formed at the duty cycle of 10% has a maximum thickness and best section morphology.
出处
《表面技术》
EI
CAS
CSCD
2005年第5期59-62,共4页
Surface Technology
关键词
微弧氧化
脉冲
占空比
铝
氧化膜
Microarc oxidation
Pulse
Duty cycle
Al
Oxide film
