摘要
低能离子溅射是表面分析中清洁固体表面和深度剖面分析的主要手段之一。由于离子溅射改变了固体表面化学成分，引起表面成分的再分布，使俄歇电子谱、X射线光电子谱以及二次离子质谱等表面分析手段，对溅射后固体表面成分的定量分析结果与实际结果有较大的差别。本文以离子溅射合金表面成分达到平行时择优溅射、离子轰击诱导偏析和增强扩散效应之间动态平衡状态的假设为基础，得到了一个与择优溅射、离子轰击诱导偏析和增强扩散修正因子有关的离子溅射修正因子的分析表达式，并将其应用于Ag－Pd合金的离子溅射定量修正计算，发现计算结果能够与实验结果较好地吻合。解释了合金离子溅射修正因子随离子参数的变化。
It is well known that low energy ion sputtering plaps an important role in quantification of surface composition by AES and XPS,such as to clean surface contamination and obtain depth profiles by low energy ion beam sputtering,ect. However,surface compostion can be altered and quantitative analysis accuracy is limited due to ion sputtering effects. Based on consideration of the preferential sputtering(PS),ion bombardment induced segregation (BIS) and radiation enhanced diffusion(RED) arrived at a steady state,we have developed a new analytical relationship of ion sputtering correction factor fot alloys. It is found that the calculated results is in agreement with the experimental results for the Ag-Pd alloy which was intensively studied. General experimental phenomena are explained in terms of the relationship,and some important factors affecting ion sputtering correction factor are also discussed.
出处
《真空科学与技术》
CSCD
1994年第1期57-62,共6页
Vacuum Science and Technology
关键词
表面
溅射
离子溅射
定量分析
Surface composition, AES, XPS, Quantitative analysis, Low energy ion, Sputtering correction
