摘要
采用中频交流磁控溅射氧化锌铝(ZnO+2％Al2O3)陶瓷靶材的方法制备了掺铝氧化锌ZAO(ZnO:Al)薄膜.利 用红外光谱仪测试了薄膜的红外反射性能,研究了薄膜厚度、基体温度和氩气压力对ZAO薄膜红外反射性能的影响规律,确定了 制备具有高红外反射率的ZAO薄膜的工艺参数.
Al-doped zinc oxide (ZAO) thin films were prepared by middle-frequency alternative magnetron sputtering with ZAO (ZnO+2%Al2O3) ceramic target. IR (infrared reflection) spectrometry was used to examine infrared reflection properties. The influences of film thickness, substrate temperature and argon gas pressure on the performances of ZAO thin films were investigated. The technical parameters for depositing ZAO films with high infrared reflection were determined.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第3期333-336,共4页
Acta Metallurgica Sinica
基金
国家高技术研究发展规划资助项目2001AA513024
关键词
磁控溅射
ZAO薄膜
红外反射
magnetron sputtering
ZAO thin film
infrared reflection
