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高g微阵列式加速度传感器封装研究 被引量:3

Research of High-g Array Accelerometer Packaging
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摘要 当高g微阵列式加速度传感器在受到1.13×105g加速度的冲击作用下,加速度传感器内引线遭到破坏,使加速度计失效。通过试验分析了高g微阵列加速度传感器的封装,在封装外壳和内引线焊接方式上做出了最优的选择,通过试验分析超声波热压焊焊接压力对焊接强度的影响。在超声波焊接机许用的焊接压力范围内,固定其他焊接工艺参数,得到最佳的焊接压力值,使得封装内引线焊接强度达到最佳。通过改进的封装方式加工的微阵列式加速度传感器在ENDEVCO2925设备上进行冲击试验,在1.22×105g加速度的冲击作用下,传感器能正常稳定地工作。 The high-g array accelerometer could not work under the high-g impact of 1.13×105 g,in which the inner wire welding is destroyed.This paper researched the package of high-g accelerometer,redesigned the package shape,changed the inner wire welding type,obtained the relationship between ultrasonic welding pressure and welding strength by testing.Given certain value to other process parameters,the optimal welding pressure was gained in the range of allowable pressure, which made the welding strength reach the ...
机构地区 电子科技大学
出处 《仪表技术与传感器》 CSCD 北大核心 2008年第5期7-8,26,共3页 Instrument Technique and Sensor
关键词 高g 加速度传感器 内引线焊接 焊接强度 工艺参数 high-g accelerometer inner wire welding welding strength process parameter
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共引文献29

同被引文献22

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