摘要
为满足电子产业对二氧化硅的高纯度需求,本文采用了一种分段碳分制备高纯二氧化硅的新技术。通过一段碳分除杂,二段碳分产出高纯二氧化硅。实验确定了搅拌速度为400 r·min^(-1),温度为343 K,CO_(2)气体流量为60 mL·min^(-1),制备了纯度为99.995%的二氧化硅,其中铝、钙等金属杂质质量分数分别为48.3×10^(-4)%和9.7×10^(-4)%,达到了电子工业要求,证实了分段碳分法适于制备高纯二氧化硅。
In order to meet the high-purity demand of silica in electronic industry,a new technology of preparing high-purity silica by segmented carbonation decomposition is proposed in this paper.By removing impurities from the first stage of carbon separation,the second stage of carbon separation produces high-purity silica.The results show that the stirring speed is 400 r·min^(-1),the temperature is 343 K,the CO_(2) gas flow rate is 60 mL·min^(-1),and the silica with a purity of 99.995%is prepared,including metal impurities such as aluminum and calcium,the mass fractions of which are 48.3×10^(-4)%and 9.7×10^(-4)%,respectively,which meet the requirements of the electronic industry and prove that the method of segmented carbonation decomposition is suitable for the preparation of high purity silica.
作者
刘海洋
翟玉春
Liu Haiyang;Zhai Yuchun(School of Metallurgy,Northeastern University,Shenyang 110819,China;School of Materials Science and Engineering,Henan University of Science and Technology,Luoyang 471000,China)
出处
《轻金属》
北大核心
2021年第4期42-47,共6页
Light Metals
基金
国家重点基础研究发展计划项目(2007CB613603)
国家自然科学基金项目(51774070)
关键词
白炭黑
分段碳分
金属杂质
高纯二氧化硅
amorphous silica
segmented carbonation
metal impurities
high purity silica
