An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyze...An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.展开更多
An improved transverse Ising model is proposed by taking the depolarization field effect into account. Within the framework of mean-held theory we investigate the behavior of the ferroelectric thin film. Our results s...An improved transverse Ising model is proposed by taking the depolarization field effect into account. Within the framework of mean-held theory we investigate the behavior of the ferroelectric thin film. Our results show that the influence of the depolarization field is to flatten the spontaneous polarization profile and make the films more homogeneous, which is consistent with Ginzburg Landau theory. This fact shows that this model can be taken as an effective model to deal with the ferroelectric film and can be further extended to refer to quantum effect. The competition between quantum effect and depolarization field induces some interesting phenomena on ferroelectric thin films.展开更多
Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency ...Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency （RF） magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34..357 rim, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.5. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10μC/cm^2 and 13μC/cm^2 respectively.展开更多
Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usuall...Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly（methyl metacrylate） （PMMA） was introduced as additive into P3HT/P（VDF-TrFE） semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.展开更多
The molecular aggregation, orientation, and structure in Langmuir-Blodgett films of ferroelectric liquid crystal were studied by ultraviolet and Fourier transform infrared spectra. The results show that medium strong ...The molecular aggregation, orientation, and structure in Langmuir-Blodgett films of ferroelectric liquid crystal were studied by ultraviolet and Fourier transform infrared spectra. The results show that medium strong (H-aggregates) in the Langmuir-Blodgett films of ferroelectric liquid crystal are formed by chromophores where the alkyl chains are nearly perpendicular to the film surface. Compared with the cast films, the CO stretching bands, due to the rotational isomerism around the O—C axis of the chiral part, can be identified clearly in Langmuir-Blodgett films.展开更多
By taking into account the two-spin interaction in the transverse Ising model （TIM）, the influence of the defect layers （including JB and ΩB） on the polarization and Curie temperature are calculated numerically, ...By taking into account the two-spin interaction in the transverse Ising model （TIM）, the influence of the defect layers （including JB and ΩB） on the polarization and Curie temperature are calculated numerically, within the framework of the decoupling approximation under Green＇s function. The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of JB and the small value of ΩB of the defect layers. Meanwhile, the dependence of the crossover values of the exchange interaction JA, the transverse field ΩA of the bulk material on the exchange interaction JB and the transverse field ΩB of the defect layers are shown in 3-Dimensional （3-D） figures for the first time. Moreover, the transition features of the ferroelectric thin film with defect layers are presented.展开更多
文摘An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.
文摘An improved transverse Ising model is proposed by taking the depolarization field effect into account. Within the framework of mean-held theory we investigate the behavior of the ferroelectric thin film. Our results show that the influence of the depolarization field is to flatten the spontaneous polarization profile and make the films more homogeneous, which is consistent with Ginzburg Landau theory. This fact shows that this model can be taken as an effective model to deal with the ferroelectric film and can be further extended to refer to quantum effect. The competition between quantum effect and depolarization field induces some interesting phenomena on ferroelectric thin films.
文摘Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency （RF） magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34..357 rim, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.5. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10μC/cm^2 and 13μC/cm^2 respectively.
基金This work was supported by the STCSM （No.13NMI400600） and the National Natural Science Foundation of China （No.U1430106）.
文摘Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly（methyl metacrylate） （PMMA） was introduced as additive into P3HT/P（VDF-TrFE） semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.
基金Project(2004CB619301) supported by the National Key Fundamental Research and Development Program of China
文摘The molecular aggregation, orientation, and structure in Langmuir-Blodgett films of ferroelectric liquid crystal were studied by ultraviolet and Fourier transform infrared spectra. The results show that medium strong (H-aggregates) in the Langmuir-Blodgett films of ferroelectric liquid crystal are formed by chromophores where the alkyl chains are nearly perpendicular to the film surface. Compared with the cast films, the CO stretching bands, due to the rotational isomerism around the O—C axis of the chiral part, can be identified clearly in Langmuir-Blodgett films.
文摘By taking into account the two-spin interaction in the transverse Ising model （TIM）, the influence of the defect layers （including JB and ΩB） on the polarization and Curie temperature are calculated numerically, within the framework of the decoupling approximation under Green＇s function. The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of JB and the small value of ΩB of the defect layers. Meanwhile, the dependence of the crossover values of the exchange interaction JA, the transverse field ΩA of the bulk material on the exchange interaction JB and the transverse field ΩB of the defect layers are shown in 3-Dimensional （3-D） figures for the first time. Moreover, the transition features of the ferroelectric thin film with defect layers are presented.
