摘要
在较低的电压下,铁电畴发生反转的性能对于研发高密度铁电存储器是至关重要的.为了实现高密度存储,铁电畴必须做得愈小愈好.然而,当外加电场撤去后,很小的铁电畴是不稳定的,会发生缩小,直致消失,导致存储的信息消失.为解决此问题,发展了一种通用的方法用于决定避免反向反转的铁电畴的尺寸.做为一个例子,确定了由上下电极覆盖的铁电薄膜中最小180度电畴尺寸.该研究可以用于许多相似的问题.
Ferroelectric domain switching under low voltage or short pulses is of interest to the development of high-density random access memory （FRAM） devices. Being necessarily very small in size, instability and back switching often occurs when the external voltage is removed, and creates serious problems. A general approach to determine the minimum size of ferroelectric domain to avoid back switching was developed, and as an example, a 180 degree domain in a ferroelectric thin film covered by the upper and lower electrodes was considered in detail. The results show that the approach is generally applicable to many other fields, including phase transformation, nucleation and expansion of dislocation loops in thin films, etc.
出处
《应用数学和力学》
CSCD
北大核心
2006年第8期899-903,共5页
Applied Mathematics and Mechanics
基金
国家自然科学基金资助项目(502320301017203010572155)
关键词
铁电膜
180度铁电畴
稳定分析
反向反转
ferroelectric film
180 degree domain
stability analysis
back switching
