摘要
首次采用二氰二胺的N,N二甲基甲酰胺(DMF)溶液做沉积液,用Si(100)和ITO导电玻璃做基底,在阴极上电化学沉积了CNx薄膜。X射线衍射(XRD)花样说明沉积的CNx薄膜为非晶结构。X射线光电子能谱(XPS)、傅立叶转换红外光谱(FTIR)分析结果表明CNx样品薄膜的N/C比为0.7左右,碳和氮主要以C—N、C=N的形式成键,有少量的碳和氮以C≡N的形式成键。电阻率测试显示,样品具有较高的电阻率,Si(100)和ITO导电玻璃基底上氮化碳薄膜的电阻率值范围分别为1011～1012Ω·cm和1012～1013Ω·cm。用Si(100)、ITO导电玻璃两种衬底,CNx薄膜的沉积速率、N含量和电阻率不同,说明衬底的选择对沉积过程和沉积膜的性能有重要影响。
On ITO-coated glass substrates and Si (l00) substrates carbon nitride films were prepared by electrodeposition in which solutions of dicyandiamide and N, N-dimethlformamide were used as electrolytes. The films were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and X-ray diffraction (XRD). It indicates that carbon nitride films are amorphous, the N/C ratio is 0.72 for a typical sample. Three types of chemical bonds between nitrogen and carbon, C-N, C=Ni, C≡N, appears in the films, in which C-N, C=N are dominant. Resistivity of samples is l011-1012 Ω·cm on Si (100) substrates, 1012-1013 Ω·cm on ITO-coated glass substrates. Depositional rate, nitrogen concentration and resistivity of CNx films are different on ITO-coated glass substrate and Si(100) substrate. The results show that selection of substrate plays an important role in the electrodeposition.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2003年第4期400-402,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(20171007)
教育部博士点基金资助项目(B 123)
