摘要
以GaN为代表的第三代半导体材料及器件的开发是新兴半导体产业的核心和基础,是信息产业前进的发动机,同时有可能改变人类照明光源的技术现状。本文对GaN固体光源的起源和发展做了回顾和展望,并给出几种可见光功率LED芯片的结构及其封装特点,最后指出在未来50年内,用GaN固体光源取代白炽灯照明将成为现实。
GaN is the representative for the new development of the 3rd generation of the semiconductor material and devices, which are the core and base of the semiconductor industry. It promotes the progress of the information industry, meanwhile, there is a great possibility to improve the technology status of the illumination light source for the human. In this paper, the origins and the development of the GaN solid state light source are reviewed and prospected, and some sorts of chips for visible light power LED and their packing features are given. Finally it points out that the incandescent lamp can be replaced by the GaN solid state light source within 50 years in the future.
出处
《微纳电子技术》
CAS
2003年第2期1-5,共5页
Micronanoelectronic Technology
