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磁控溅射纳米SnO_2薄膜的气敏特性 被引量:11

Gas sensing character of nanometer SnO_2 film prepared by magnetron sputtering
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摘要 采用磁控溅射制备SnO2薄膜气敏元件,测试了气敏元件的性能,研究了SnO2薄膜气敏元件薄膜厚度、元件加热功率和环境温度和湿度对元件的影响,气敏元件具有很好的灵敏度和选择性特性,对其敏感机理进行了探讨。 *'SnO2 film gas sening element was prepared by magnetron sputtering,the influence on the character of gas sensing element was analysed and researched,such as the thickness of film, power of heater,temperature and humidity of circumstance.The element had very well sensitivity and selectivity,the sensitive mechanism was discussed.
出处 《传感器技术》 CSCD 北大核心 2003年第1期61-64,共4页 Journal of Transducer Technology
关键词 磁控溅射 气敏特性 二氧化锡薄膜 气敏元件 SNO2 敏感机理 SnO_2 film gas sensing element character
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  • 1郝丕柱,裘南畹.金属氧化物气敏半导体表面受感性能的研究[J].电子学报,1994,22(8):105-108. 被引量:9
  • 2李中军.超细SiO2粉末的制备[J].应用化学,1998,(3):25-27.
  • 3[1]F.Paraguay D, Miki-Yoshida M, et al. Thin Solid Film, 2000;373:137
  • 4[2]Chu Xiangfeng, liu Xingqin. et al. Materials Research Bulletin, 1999;34:1789
  • 5[3]Wang Yude, Sun Xiaodan, et al. Solid-State Electronics, 2000;44:2009
  • 6[4]Popov S G, Lovitskii V A. Journal of Solid Chemistry, 1981;38(1)
  • 7[5]Inagaki N, Tasaka S, et al. Journal of Polymer Science, 1990;46:173
  • 8[6]Venata M, Mysilk V, et al. Sensors and Actuators B:Chemical, 2000;71:24-30
  • 9[7]Huo L H, Li X L, et al. Sensors and Actuators B:Chemical, 2000;71:77-84
  • 10[8]Ki-Chul Kim, Sung M. Cho, et al. Sensors and Actuators B:Chemical, 2000;67:194-198

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