摘要
Switchable conductivity in elementary semiconducting materials has a high potential for the design of diodes,transistors and energy conversion technologies.However,the ability to utilize their physical properties is dependent on doping within the carrier density transition temperature.Single-crystal tellurium has a high Seebeck coefficient and intrinsic p-n-p conduction at room temperature and therefore,is not suitable for thermoelectric applications.We demonstrate that the addition of iso valent Se lowers the Fermi level to achieve a stable p-type conductivity with a high band degeneracy near the valence band.We observed shifts in the n-p transition temperature below the intrinsic conductivity at 470 K based on changes in stoichiometry and carrier concentration above 10^(17)cm^(-3).In addition,the high thermal conductivity is significantly reduced with the increase in Se alloying due to the mass and strain fluctuations.This results in a moderately high zT of 0.4 at 673 K.
出处
《Rare Metals》
SCIE
EI
CAS
CSCD
2024年第11期5975-5984,共10页
稀有金属（英文版）
基金
financially supported by the National Research Foundation of the Republic of Korea funded by the Ministry of Science and ICT(Nos.2020M3D1A1110501 and 2021M2D1A1039966)。
