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Al_(2)O_(3)对Ti膜离子注入表面损伤及D滞留量的影响研究

Effect of Al_(2)O_(3)on Surface Damage and D Retention of Ti Film During Ion Implantation
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摘要 为提高中子管Ti膜的储氢及抗溅射损伤性能,该研究通过在Ti膜表面沉积一层Al_(2)O_(3)保护层,研究了该保护层对Ti膜在D离子注入过程中表面损伤及D滞留量的影响。采用射频磁控溅射技术完成了Ti膜和表面有Al_(2)O_(3)保护层的Ti膜(Al_(2)O_(3)/Ti膜)样品的制备,开展了D离子注入实验,利用扫描电子显微镜(SEM)对D离子注入前后的表面形貌进行分析,并通过热脱附谱(TDS)实验研究保护层对Ti膜中D滞留量的影响。SEM结果表明,注入5×10^(17)个D离子后,Ti膜表面出现开裂和剥离现象,而Al_(2)O_(3)/Ti膜表面无开裂和剥离现象,Al_(2)O_(3)保护层抑制了Ti膜的开裂和剥离,可提高Ti膜使用寿命。TDS实验结果表明,增加Al_(2)O_(3)保护层后,D脱附峰值温度提升4.9%,膜内D滞留量提升10.3%,在D离子注入过程中Al_(2)O_(3)保护层可阻止膜内D原子的释放进而提升Ti膜内D滞留量。该文初步验证了Al_(2)O_(3)有作为中子管Ti膜保护层材料的潜力。 To further enhance the hydrogen storage and sputter damage resistance of Ti film used in neutron tube,this study deposited an Al_(2)O_(3)protective layer on the surface of Ti film and investigated its impact on surface damage and D retention during D ion implantation.The Ti film and Ti film with Al_(2)O_(3)protective layer(Al_(2)O_(3)/Ti film)were prepared using radio-frequency magnetron sputtering tech⁃nology.D ion implantation experiments were conducted,and scanning electron microscopy(SEM)was used to analyze the surface morphology before and after D ion implantation.Additionally,ther⁃mal desorption spectroscopy(TDS)was employed to study the effect of the protective layer on the D re⁃tention in the Ti film.SEM results showed that after implanting 5×10^(17)D ions,the Ti film surface ex⁃hibited cracking and peeling,whereas the Al_(2)O_(3)/Ti film surface did not show such phenomena.The Al_(2)O_(3)protective layer suppressed cracking and peeling of the Ti film,which can enhance the film's life-time.TDS results indicated that with the addition of the Al_(2)O_(3)protective layer,the peak desorp⁃tion temperature of D increased by 4.9%,and the D retention in the film increased by 10.3%.Dur⁃ing D ion implantation,the Al_(2)O_(3)protective layer prevented the release of D atoms from the film,thereby improving D retention amount.This study preliminarily confirms the potential of Al_(2)O_(3)as a protective layer for Ti film in neutron tube.
作者 胡江钰 范宇 梁参军 郝丽娟 刘朝伟 宋勇 HU Jiang-yu;FAN Yu;LIANG Can-jun;HAO Li-juan;LIU Chao-wei;SONG Yong(Science Island Branch of Graduate School,University of Science and Technology of China,Hefei 230026,China;Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China;School of Energy and Power Engineering,Shandong University,Jinan 250061,China;Thinking Neutron Technology Co.,Ltd.,Hefei 230031,China;International Academy of Neutron Science,Qingdao 266199,China;Shandong Key Laboratory of Neutron Science and Technology,Qingdao 266199,China)
出处 《分析测试学报》 CAS CSCD 北大核心 2024年第10期1664-1668,共5页 Journal of Instrumental Analysis
基金 国家重点研发计划(2023YFF0717000) 泰山产业创新领军人才项目(tscx202408142)。
关键词 中子管靶 Ti膜 Al_(2)O_(3)保护层 离子注入 D滞留量 neutron tube target Ti film Al_(2)O_(3)protective layer ion implantation D retention
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